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\begin{document}
\title{Critical Exponents of Dilute Ferromagnetic Insulator Ga$_{1-x}$Mn$_x$N}
\author{\underline{S. Stefanowicz}}
\affiliation{Institute of Physics, Polish Academy of Sciences, Warsaw, Poland}
\author{G. Kunert}
\affiliation{Institute of Solid State Physics, University of Bremen, Germany}
\author{W. Stefanowicz}
\affiliation{Institute of Physics, Polish Academy of Sciences, Warsaw, Poland}
\author{D. Hommel}
\affiliation{Institute of Solid State Physics, University of Bremen, Germany}
\author{T. Dietl}
\affiliation{Institute of Physics, Polish Academy of Sciences, Warsaw, Poland}
\affiliation{Institute of Theoretical Physics, University of Warsaw, Poland}
\affiliation{WPI-AIMR, Tohoku University, Sendai, Japan}
\author{M. Sawicki}
\affiliation{Institute of Physics, Polish Academy of Sciences, Warsaw, Poland}
\begin{abstract}
Insulating ferromagnet (Ga,Mn)N brings a new paradigm into the semiconductor family. It is  therefore important to comprehensively characterize its magnetic ground state. To this end we analyze the critical exponents $\beta$ and $\gamma$ for MBE grown layers with $0.04 < x < 0.10$ [1] and superlattice
structures Ga$_{1-x}$Mn$_x$N/GaN:Mg. In all samples the critical behavior shows strong deviations from the magnetically clean case ($x=1$): an apparent breakdown of the Harris criterion, a nonmonotonic crossover in the values of the $\gamma_{\text{eff}}$  between the high temperature and critical regimes, and a smearing of the critical region by macroscopic inhomogeneities in the spin distribution.


\textbf{References:}
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{\scriptsize[1] S. Stefanowicz \textit{et al.},  Phys. Rev. B   \textbf{88}, 081201(R) (2013) and references therein}
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\textit{This work is supported by Polish NSC grants  (DEC-2012/07/N/ST3/03146, DEC-2011/02/A/ST3/00125, DEC-2013/09/B/ST3/04175)}
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\end{abstract}
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