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\begin{document}
\title{Structure and magnetic properties of magnetic tunnel junctions with Ta/CuN/Ta and Ta/Ru/Ta buffer layers}
\author{\underline{J.~Kanak}}
\affiliation{AGH University of Science and Technology, Department of Electronics, Krakow, Poland}
\author{M.~Banasik}
\affiliation{AGH University of Science and Technology, Department of Electronics, Krakow, Poland}
\author{A.~Żywczak}
\affiliation{AGH University of Science and Technology, Department of Electronics, Krakow, Poland}
\affiliation{AGH University of Science and Technology, Academic Centre of Materials and Nanotechnology, Krakow , Poland}
\author{S.~Ziętek}
\affiliation{AGH University of Science and Technology, Department of Electronics, Krakow, Poland}
\author{M.~Czapkiewicz}
\affiliation{AGH University of Science and Technology, Department of Electronics, Krakow, Poland}
\author{W.~Skowroński}
\affiliation{AGH University of Science and Technology, Department of Electronics, Krakow, Poland}
\author{W.~Powroźnik}
\affiliation{AGH University of Science and Technology, Department of Electronics, Krakow, Poland}
\author{J.~Wrona}
\affiliation{AGH University of Science and Technology, Department of Electronics, Krakow, Poland}
\affiliation{Singulus Technologies AG, Hanauer Landstrasse 103, 63796 Kahl am Main, Germany}
\author{M.~Frankowski}
\affiliation{AGH University of Science and Technology, Department of Electronics, Krakow, Poland}
\author{T.~Stobiecki}
\affiliation{AGH University of Science and Technology, Department of Electronics, Krakow, Poland}
\begin{abstract}
\begin{spacing}{1.0}
Multilayer structures, designed for magnetic tunnel junctions fabrication, were prepared with two different buffer layers: 5 Ta / 50 CuN / 3 Ta / 50 CuN / 3 Ta and 5 Ta / 20 Ru / 3 Ta (thicknesses in nm) and investigated in order to analyze the structural and the magnetic properties. The structure of the samples was as follows: buffer / 16 PtMn / 2.0 Co$_{70}$Fe$_{30}$ / 0.9 Ru / 2.5 Co$_{40}$Fe$_{40}$B$_{20}$ / 0.6 - 1.1 wedge MgO / 2.5 Co$_{40}$Fe$_{40}$B$_{20}$ / 5 Ru. We present strong influence of buffer structure on crystallization of PtMn antiferromagnetic layer, roughness of magnetic layers and interlayer coupling energy.
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\textit{This project is supported by the Polish National Science Center Grant 2012/05/E/ST7/00240 and Swiss Contribution by NANOSPIN PSPB-045/2010.}
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\end{abstract}
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\end{document}
